Title :
Germanium MOS transistors on sapphire and alumina platforms
Author :
Baine, P.T. ; Gamble, H.S. ; Armstrong, B.M. ; Mitchell, S.J.N. ; McNeill, D.W. ; Rainey, P.V. ; Low, Y.H. ; Low, Y.W. ; Tantraviwat, D.
Author_Institution :
Northern Ireland Semicond. Res. Centre, Queen´´s Univ. Belfast, Belfast, UK
Abstract :
A low temperature process has been established for the manufacture of self-aligned W gate germanium MOS transistors. Hole carrier mobility in the range 500 - 650 cm2V-1s-1 has been achieved. Sub threshold slope, threshold voltage and carrier mobility have been characterised as a function of temperature. The technology has been successfully transferred to both germanium on sapphire and germanium on alumina substrates providing an ideal platform technology for system on a chip.
Keywords :
MOSFET; alumina; cryogenic electronics; germanium; hot carriers; sapphire; semiconductor device manufacture; Al2O3; Ge; W gate germanium MOS transistors; alumina platforms; hole carrier mobility; low temperature process; sapphire platforms; subthreshold slope; system on a chip; threshold voltage; Germanium; Insulation; MOSFETs; Manufacturing processes; Silicon on insulator technology; Substrates; System-on-a-chip; Temperature dependence; Thermal stresses; Threshold voltage;
Conference_Titel :
SOI Conference, 2009 IEEE International
Conference_Location :
Foster City, CA
Print_ISBN :
978-1-4244-4256-0
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2009.5318767
