Title :
LDMOS transistors on Si-on-SiC hybrid substrates having crystalline or poly-crystalline SiC - electrical and thermal characterization
Author :
Vallin, Ö ; Li, L.G. ; Norström, H. ; Smith, U. ; Olsson, J.
Author_Institution :
Angstrom Lab., Uppsala Univ., Uppsala, Sweden
Abstract :
First ever demonstration of LDMOS transistors on Sion-SiC hybrid substrates. No degradation in transistor performance as compared to conventional SOI. PolySiC is available in larger wafer sizes but seems to have slightly lower heat conductivity than crystalline SiC. The intermediate alpha-Si layer provides electrical advantages and does not form any thermal barriers.
Keywords :
MOSFET; silicon-on-insulator; LDMOS transistors; SOI; SiC; crystalline electrical characterization; heat conductivity; intermediate layer; poly-crystalline electrical characterization; thermal barriers; thermal characterization; Conductivity; Crystallization; Insulation; Resistors; Silicon carbide; Silicon on insulator technology; Testing; Thermal resistance; Transconductance; Wafer bonding;
Conference_Titel :
SOI Conference, 2009 IEEE International
Conference_Location :
Foster City, CA
Print_ISBN :
978-1-4244-4256-0
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2009.5318769
