Title :
Engineering silicon-on-insulator (SOI) substrates for hybrid orientation technologies (HOT)
Author :
Signamarcheix, T. ; Biasse, B. ; Papon, A.M. ; Nolot, E. ; Ghyselen, B. ; Clavelier, L.
Author_Institution :
CEA, LETI, Grenoble, France
Abstract :
In this paper, deep amorphization of SOI substrate that preserves a crystalline surface layer was demonstrated on (110) and (100) oriented SOI films. The crystalline integrity of the surface layer allowed it to be a template for solid phase epitaxy. At an optimized temperature, pseudo-MOSFET measurements indicate a complete recovery of the electronic properties. However, a small increase is observed for the density of interface states. These results demonstrate the feasibility of this approach to form hybrid (100)/(110) SOI films that would allow increasing the hole mobility.
Keywords :
MOSFET; amorphisation; electronic density of states; hole mobility; interface states; silicon; silicon-on-insulator; solid phase epitaxial growth; thin films; (100) oriented SOI films; (110) oriented SOI films; Si; crystalline integrity; crystalline surface layer; deep amorphization; density-of-interface states; electronic property; hole mobility; hybrid orientation technology; pseudo-MOSFET measurements; silicon-on-insulator substrates; solid phase epitaxy; Amorphous materials; Annealing; Crystallization; Epitaxial growth; Interface states; MOSFET circuits; Silicon on insulator technology; Solids; Substrates; Temperature measurement;
Conference_Titel :
SOI Conference, 2009 IEEE International
Conference_Location :
Foster City, CA
Print_ISBN :
978-1-4244-4256-0
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2009.5318773
