Engineering silicon-on-insulator (SOI) substrates for hybrid orientation technologies (HOT)

Author

Signamarcheix, T. ; Biasse, B. ; Papon, A.M. ; Nolot, E. ; Ghyselen, B. ; Clavelier, L.

Author_Institution

CEA, LETI, Grenoble, France

fYear

2009

fDate

5-8 Oct. 2009

Firstpage

1

Lastpage

2

Abstract

In this paper, deep amorphization of SOI substrate that preserves a crystalline surface layer was demonstrated on (110) and (100) oriented SOI films. The crystalline integrity of the surface layer allowed it to be a template for solid phase epitaxy. At an optimized temperature, pseudo-MOSFET measurements indicate a complete recovery of the electronic properties. However, a small increase is observed for the density of interface states. These results demonstrate the feasibility of this approach to form hybrid (100)/(110) SOI films that would allow increasing the hole mobility.

Keywords

MOSFET; amorphisation; electronic density of states; hole mobility; interface states; silicon; silicon-on-insulator; solid phase epitaxial growth; thin films; (100) oriented SOI films; (110) oriented SOI films; Si; crystalline integrity; crystalline surface layer; deep amorphization; density-of-interface states; electronic property; hole mobility; hybrid orientation technology; pseudo-MOSFET measurements; silicon-on-insulator substrates; solid phase epitaxy; Amorphous materials; Annealing; Crystallization; Epitaxial growth; Interface states; MOSFET circuits; Silicon on insulator technology; Solids; Substrates; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2009 IEEE International

Conference_Location

Foster City, CA

ISSN

1078-621X

Print_ISBN

978-1-4244-4256-0

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2009.5318773

Filename

5318773