• DocumentCode
    2291781
  • Title

    Analyze of temporal and random variability of a 45nm SOI SRAM cell

  • Author

    Laplanche, Y.

  • Author_Institution
    ARM, Grenoble, France
  • fYear
    2009
  • fDate
    5-8 Oct. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This paper presents the analysis of a 45 nm SOI SRAM cell variability including history effects and random variability. This leads to an accurate margin calculation.
  • Keywords
    SRAM chips; silicon-on-insulator; statistical analysis; SOI SRAM cell variability; SRAM cell design; Si-SiO2; accurate margin calculation; generalized extreme value theory; random variability analysis; size 45 nm; statistical modeling; temporal variability analysis; Fluctuations; Helium; History; Libraries; Logic; Monitoring; Random access memory; Sociotechnical systems; Steady-state; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2009 IEEE International
  • Conference_Location
    Foster City, CA
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-4244-4256-0
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2009.5318782
  • Filename
    5318782
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2291781