DocumentCode :
2291824
Title :
Thermal actuation of high frequency micromechanical resonators
Author :
Rahafrooz, Amir ; Hajjam, Arash ; Pourkamali, Siavash
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Denver, Denver, CO, USA
fYear :
2009
fDate :
5-8 Oct. 2009
Firstpage :
1
Lastpage :
2
Abstract :
This paper demonstrates the possibility of thermally actuating high-frequency micromechanical resonators. A single-mask fabrication process was used to fabricate high frequency single crystal silicon resonators on SOI substrates. The resonators where operated in a one-port configuration with parts of the resonator structure performing both thermal actuation and piezo-resistive sensing. Quality factors as high as 63,800 and resonance frequencies as high as 5.1 MHz have been demonstrated. It is shown theoretically and experimentally that thermal actuation is a more suitable approach for higher frequency resonators with dimensions in the lower microns and nanometer range.
Keywords :
actuators; elemental semiconductors; micromechanical resonators; silicon; SOI substrates; Si-SiJk; frequency 5.1 MHz; high frequency single crystal silicon resonators; one-port configuration; piezo-resistive sensing; resonator structure; single-mask fabrication process; thermal actuation; thermally actuating high-frequency micromechanical resonators; Actuators; Electric resistance; Fluctuations; Micromechanical devices; Resonance; Resonant frequency; Temperature; Thermal factors; Thermal force; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 2009 IEEE International
Conference_Location :
Foster City, CA
ISSN :
1078-621X
Print_ISBN :
978-1-4244-4256-0
Electronic_ISBN :
1078-621X
Type :
conf
DOI :
10.1109/SOI.2009.5318786
Filename :
5318786
Link To Document :
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