Title :
Convergence properties of relaxation methods in the DC analysis of large MOS circuits
Author :
Knopman, J. ; Mesquita, A. ; Schechtman, J.
Author_Institution :
Dept. of Electr. Eng., Fed. Univ. of Rio de Janeiro, Brazil
Abstract :
A novel approach, formulated as a special case of transient analysis is proposed for the DC analysis problem. This makes it possible to rely on a common background in both instances. Simulation results for the DC analysis of MOS circuits are compared with those obtained by the standard circuit simulator SPICE
Keywords :
MOS integrated circuits; circuit analysis computing; convergence of numerical methods; DC analysis of large MOS circuits; convergence; relaxation methods; transient analysis; Analytical models; Capacitance; Circuit simulation; Convergence; Equations; Gaussian processes; MOS capacitors; Performance analysis; Relaxation methods; Transient analysis;
Conference_Titel :
Circuits and Systems, 1988., IEEE International Symposium on
Conference_Location :
Espoo
DOI :
10.1109/ISCAS.1988.15248
