• DocumentCode
    2293383
  • Title

    A novel dimension reduction technique for the capacitance extraction of 3D VLSI interconnects

  • Author

    Hong, W. ; Sun, W. ; Zhu, Z. ; Ji, H. ; Song, B. ; Wei-Ming Dai, W.

  • Author_Institution
    Dept. of Radio Eng., Southeast Univ., Nanjing, China
  • fYear
    1996
  • fDate
    10-14 Nov. 1996
  • Firstpage
    381
  • Lastpage
    386
  • Abstract
    In this paper, we present a new capacitance extraction method named Dimension Reduction Technique (DRT) for 3D VLSI interconnects. The DRT converts a complex 3D problem into a series of cascading simple 2D problems. Each 3D problem is solved separately, so we can choose the most efficient method according to the arrangement of conductors. More importantly, it is very easy to obtain the analytical solutions of 2D problem in many layers such as the pure dielectric layers and the layers with parallel signal lines. Therefore, the domain that has to be analyzed numerically is minimized. This leads to the drastic reduction of the computing time and memory needs. We have used the DRT to extract the capacitances of multilayered and multiconductor cross-overs, bends, via with signal lines and open-end. The results are in good agreement with those of Ansoft´s SPICELINK and MIT´s FastCap, but the computing time and memory size used by the DRT are several even tens times less than those used by SPICELINK and FastCap.
  • Keywords
    VLSI; circuit CAD; integrated circuit interconnections; 3D VLSI interconnects; DRT; Dimension Reduction Technique; FastCap; SPICELINK; capacitance extraction; dielectric layers; parallel signal lines; Capacitance; Conductors; Dielectrics; Differential equations; Finite element methods; Integral equations; Integrated circuit interconnections; Packaging; Sparse matrices; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer-Aided Design, 1996. ICCAD-96. Digest of Technical Papers., 1996 IEEE/ACM International Conference on
  • Conference_Location
    San Jose, CA, USA
  • Print_ISBN
    0-8186-7597-7
  • Type

    conf

  • DOI
    10.1109/ICCAD.1996.569825
  • Filename
    569825