Title :
Waveform relaxation applied to transient device simulation
Author :
Riechelt, M. ; White, J. ; Allen, J. ; Odeh, F.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
Abstract :
The authors investigate the possibility of accelerating the transient simulation of MOS devices by using waveform relaxation. Standard spatial discretization techniques are used to generate a large, sparsely-connected system of algebraic and ordinary differential equations in time. The waveform relaxation algorithm for solving such a system is described, and several theoretical results that characterize its convergence for device simulation are given. One-dimensional experimental results are presented.<>
Keywords :
convergence of numerical methods; differential equations; electronic engineering computing; metal-insulator-semiconductor devices; semiconductor device models; transient response; algorithm; convergence; ordinary differential equations; sparsely-connected system; spatial discretisation techniques; transient simulation of MOS devices; waveform relaxation; Acceleration; Circuit simulation; Circuit testing; Computational modeling; Convergence; Current density; Electrons; MOS devices; Operational amplifiers; Poisson equations;
Conference_Titel :
Circuits and Systems, 1988., IEEE International Symposium on
Conference_Location :
Espoo, Finland
DOI :
10.1109/ISCAS.1988.15250
