DocumentCode
2294417
Title
A monolithic integration platform for silicon photonics
Author
Wang, Zhechao ; Junesand, Carl ; Metaferia, Wondwosen ; Hu, Chen ; Lourdudoss, Sebastian ; Wosinski, Lech
Author_Institution
Sch. of ICT, R. Inst. of Technol. (Sweden), Kista, Sweden
fYear
2011
fDate
18-20 May 2011
Firstpage
1
Lastpage
2
Abstract
A novel epitaxial lateral overgrowth (ELOG) technology-based monolithic integration platform for silicon photonics is demonstrated. High quality, defect-free InP ELOG mesa has been experimentally obtained on silicon by using hydride vapor phase epitaxy (HVPE). The proposed platform provides unique advantages for the realization of active devices on silicon.
Keywords
elemental semiconductors; epitaxial growth; integrated optics; silicon; active devices realization; defect-free ELOG; epitaxial lateral overgrowth technology-based monolithic integration platform; hydride vapor phase epitaxy; photonics; Epitaxial growth; Indium phosphide; Monolithic integrated circuits; Photonics; Scanning electron microscopy; Silicon; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Information Photonics (IP), 2011 ICO International Conference on
Conference_Location
Ottawa, ON
Print_ISBN
978-1-61284-315-5
Type
conf
DOI
10.1109/ICO-IP.2011.5953715
Filename
5953715
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