Title :
Towards Si-based electrically injected group-IV lasers
Author_Institution :
Dept. of Phys., Univ. of Massachusetts Boston, Boston, MA, USA
Abstract :
Approaches towards Si-based lasers are discussed using lattice-matched group-IV heterostructures that can be deposited strain free on Si substrates with either Ge or GeSn buffer layers. Several strain-free designs are presented that include Ge/GeSiSn quantum cascade structure, GeSn/GeSiSn double heterostructure, and GeSn/GeSiSn multiple quantum wells.
Keywords :
germanium compounds; quantum cascade lasers; quantum well lasers; silicon compounds; Ge-GeSiSn; GeSn-GeSiSn; buffer layers; double heterostructure; lattice-matched group-IV heterostructures; multiple quantum wells; quantum cascade structure; strain-free design; DH-HEMTs; Lattices; Quantum cascade lasers; Silicon; Sun;
Conference_Titel :
Information Photonics (IP), 2011 ICO International Conference on
Conference_Location :
Ottawa, ON
Print_ISBN :
978-1-61284-315-5
DOI :
10.1109/ICO-IP.2011.5953769
