Title :
SiC Capacitive Pressure Sensor Node for Harsh Industrial Environment
Author :
Anis, Azza M. ; Abutaleb, M.M. ; Ragai, Hani F. ; Eladawy, M.I.
Author_Institution :
Dept. of Commun. & Electron. Eng., Helwan Univ., Cairo, Egypt
Abstract :
This paper presents an analytical and simulation solution for MEMS (Microelectromechanical Systems) capacitive pressure sensor operating in harsh environment. The proposed sensor consists of a circular SiC (Silicon Carbide) diaphragm suspended over sealed cavity on a Si (Silicon) substrate. SiC is selected in this work due to its excellent electrical stability, mechanical robustness and chemical inertness properties, which is very adequate for harsh environment. The design is based on the use of COMSOL multiphysics structural analysis to design and obtain analytical solution for a circular diaphragm deflection. The proposed sensor demonstrated diaphragm of 100 μm diameter with the gap depth 0.64 μm and the sensor exhibit a linear response with pressure load up to 3.5 MPa with maximum deflection up to 0.52 μm.
Keywords :
capacitive sensors; microsensors; pressure sensors; silicon compounds; wide band gap semiconductors; COMSOL multiphysics structural analysis; MEMS; SiC; capacitive pressure sensor node; chemical inertness property; circular diaphragm deflection; depth 0.64 mum; electrical stability; harsh industrial environment; mechanical robustness; microelectromechanical systems; pressure 3.5 MPa; silicon carbide diaphragm; size 100 mum; Capacitance; Hafnium compounds; Logic gates; Sensors; Silicon; Silicon carbide;
Conference_Titel :
Computational Intelligence, Modelling and Simulation (CIMSiM), 2011 Third International Conference on
Conference_Location :
Langkawi
Print_ISBN :
978-1-4577-1797-0
DOI :
10.1109/CIMSim.2011.82
