DocumentCode
2296325
Title
Impact of Random Process Variations on Different 65nm SRAM Cell Topologies
Author
Kansal, Sumit ; Lanuzza, Marco ; Corsonello, Pasquale
Author_Institution
Dept. of Electron., Univ. of Calabria, Rende, Italy
fYear
2010
fDate
19-21 Nov. 2010
Firstpage
703
Lastpage
706
Abstract
In this paper, the influence of random process variations on different low leakage SRAM topologies has been analyzed. This analysis was performed through extensive Monte Carlo simulations and exploiting a commercial 65 nm technology. Simulation results demonstrate that the Low Vdd SRAM cell presents the best trade-off between performances and robustness against random process variations.
Keywords
Monte Carlo methods; SRAM chips; Monte Carlo simulation; low leakage SRAM cell topology; random process variation; robustness; Low Leakage; Monte Carlo Simulations; Random Process variation; SRAM cell;
fLanguage
English
Publisher
ieee
Conference_Titel
Emerging Trends in Engineering and Technology (ICETET), 2010 3rd International Conference on
Conference_Location
Goa
ISSN
2157-0477
Print_ISBN
978-1-4244-8481-2
Electronic_ISBN
2157-0477
Type
conf
DOI
10.1109/ICETET.2010.19
Filename
5698417
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