Title :
Role of rare-earth elements in the design of radiation detectors and electroluminescent sources
Author :
Grym, J. ; Prochazkova, O. ; Zavadil, J. ; Zdansky, K.
Author_Institution :
Inst. of Photonics & Electron., Acad. of Sci. of the Czech Republic, Praha
Abstract :
Rare-earth (RE) elements present in the growth from the liquid phase have purifying effect on III-V semiconductors due to RE´s high affinity towards chemical species of shallow impurities. We demonstrate this purifying effect on the preparation of InP-based structures by liquid phase epitaxy with Pr admixture to the growth melt. We employ low temperature photoluminescence, capacitance-voltage and temperature dependent Hall effect measurements to show that optimized concentration of Pr admixture results in the growth of high purity layers of both conductivity types. We discuss the application of p-type InP layers in radiation detectors and InGaAsP layers in electroluminescent sources.
Keywords :
Hall effect; III-V semiconductors; doping profiles; electroluminescent devices; gallium arsenide; indium compounds; liquid phase epitaxial growth; photoluminescence; praseodymium; radiation detection; semiconductor doping; Hall effect; InGaAsP:Pr; InP-based structures; InP:Pr; Pr; Pr admixture; affinity; capacitance-voltage measurement; conductivity; electroluminescent sources; liquid phase epitaxy; low temperature photoluminescence; purifying effect; radiation detectors; rare-earth elements; Capacitance-voltage characteristics; Chemical elements; Electroluminescence; Epitaxial growth; Hall effect; III-V semiconductor materials; Photoluminescence; Radiation detectors; Semiconductor impurities; Temperature dependence;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4244-2325-5
Electronic_ISBN :
978-1-4244-2326-2
DOI :
10.1109/ASDAM.2008.4743292
