Hydrogenated Amorphous Carbon Films Prepared by Plasma-enhanced Chemical Vapor Deposition

Author

Huran, J. ; Kobzev, A.P. ; Balalykin, N.I. ; Pezoltd, J.

Author_Institution

Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava

fYear

2008

fDate

12-16 Oct. 2008

Firstpage

127

Lastpage

130

Abstract

A capacitively coupled plasma reactor was used for PECVD technology, where methane was introduced into the plasma reactor through the shower head. The concentration of species in the a-C:H films were determined by RBS and ERD method. The RBS results showed the main concentrations of C in the films. The concentration of hydrogen was approximately 20 at.%. The films contain a small amount of oxygen and nitrogen. Chemical compositions were analyzed by IR spectroscopy. IR results showed the presence of C-H specific bonds.

Keywords

Rutherford backscattering; amorphous state; carbon; hydrogen; hydrogen bonds; plasma CVD; spectrochemical analysis; thin films; C:H; ERD; IR spectroscopy; PECVD; RBS; bonds; capacitively coupled plasma reactor; chemical compositions; hydrogen concentration; hydrogenated amorphous carbon films; plasma-enhanced chemical vapor deposition; Amorphous materials; Chemical analysis; Chemical technology; Chemical vapor deposition; Hydrogen; Inductors; Infrared spectra; Nitrogen; Plasma chemistry; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4244-2325-5

Electronic_ISBN

978-1-4244-2326-2

Type

conf

DOI

10.1109/ASDAM.2008.4743297

Filename

4743297