Simulation studies of current voltage characteristics of inhomogeneous Schottky diode with discrete distribution of barrier heights

Author

Chand, Subhash

Author_Institution

Dept. of Appl. Sci. & Humanities, Nat. Inst. of Technol., Hamirpur

fYear

2008

fDate

12-16 Oct. 2008

Firstpage

139

Lastpage

142

Abstract

The current voltage characteristics of inhomogeneous Schottky contact with discrete Gaussian distribution of barrier heights are simulated considering thermionic emission diffusion theory. The diode parameters are extracted by fitting of simulated current voltage data into thermionic emission diffusion current equation. The effect of discrete Gaussian distribution of barrier heights on barrier parameters like barrier height, ideality factor and activation energy plots are discussed.

Keywords

Gaussian distribution; Schottky barriers; Schottky diodes; semiconductor device models; activation energy; barrier heights; current voltage characteristics; discrete Gaussian distribution; ideality factor; inhomogeneous Schottky diode; parameter extraction; thermionic emission diffusion theory; Contact resistance; Current-voltage characteristics; Gaussian distribution; Schottky barriers; Schottky diodes; Semiconductor diodes; Temperature dependence; Temperature distribution; Thermionic emission; Variable speed drives;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4244-2325-5

Electronic_ISBN

978-1-4244-2326-2

Type

conf

DOI

10.1109/ASDAM.2008.4743300

Filename

4743300