Analysis of the geometry on robustness of ESD protection devices

Author

Chvala, Ales ; Donoval, Daniel ; Beno, Peter ; Marek, Juraj ; Kosik, Tomas

Author_Institution

Dept. of Microelectron., Slovak Univ. of Technol. in Bratislava Ilkovicova, Bratislava

fYear

2008

fDate

12-16 Oct. 2008

Firstpage

143

Lastpage

146

Abstract

The analysis of the ESD protection devices supported by the advanced 2-D and 3-D mixed mode electro-thermal device and circuit simulation is presented. The influence of structure geometry on the electrical properties of ESD devices is studied. The optimization of the structure geometry allows down-shrink of the ESD protection device dimensions with further improvement of its main electrical parameters.

Keywords

circuit optimisation; circuit simulation; electrostatic discharge; integrated circuit reliability; 2-D mixed mode electro-thermal device; 3-D mixed mode electro-thermal device; ESD protection device; circuit simulation; electrical parameters; electrostatic discharge; integrated circuit failure; integrated circuit reliability; structure geometry optimization; Analytical models; Computational modeling; Diodes; Electrostatic discharge; Fluctuations; Geometry; Protection; Robustness; Semiconductor devices; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4244-2325-5

Electronic_ISBN

978-1-4244-2326-2

Type

conf

DOI

10.1109/ASDAM.2008.4743301

Filename

4743301