DocumentCode
2296933
Title
Surface control structures for high-performance AlGaN/GaN HEMTs
Author
Hashizume, Tamotsu
Author_Institution
Res. Center for Integrated Quantum Electron., Hokkaido Univ., Sapporo
fYear
2008
fDate
12-16 Oct. 2008
Firstpage
17
Lastpage
22
Abstract
Highly stable and reliable operation is absolutely required for GaN-based high-efficiency power switching devices and high-power RF AlGaN/GaN HEMTs. For the improvement of operation stability in such devices, in this paper, the surface control technologies will be addressed by introducing an ultrathin-Al-layer process, an electrochemical oxidation and a multi-mesa-channel structure with relevant technologies.
Keywords
aluminium compounds; electrochemistry; gallium compounds; high electron mobility transistors; oxidation; AlGaN-GaN; AlGaN/GaN HEMT; electrochemical oxidation; multimesa-channel structure; surface control; ultrathin-Al-layer process; Air gaps; Aluminum gallium nitride; Capacitance measurement; Density measurement; Electrodes; Gallium nitride; HEMTs; MODFETs; Oxidation; Reflectivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on
Conference_Location
Smolenice
Print_ISBN
978-1-4244-2325-5
Electronic_ISBN
978-1-4244-2326-2
Type
conf
DOI
10.1109/ASDAM.2008.4743308
Filename
4743308
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