Title :
The disposable Dot Field Effect Transistor: Process flow and overlay requirements
Author :
Moers, J. ; Gerharz, J. ; Trellenkamp, St. ; Hart, A. V D ; Mussler, G. ; Grüitzmacher, D.
Author_Institution :
Inst. of Bio- & Nanosystems, Forschungszentrum Julich, Julich
Abstract :
The progress in the field of MOSFET devices was facilitated by the downscaling of their dimensions. To maintain device performance, the lateral layout was improved continually, but in recent years new device architectures as Ultra Thin Body and Multi Gate devices were discussed. Furthermore new materials were introduced as high-K gate dielectrics and metal gates. Today the advantages of strained silicon as material for the channel are investigated. The strained material offers the advantage of a higher carrier mobility, which leads to a better Ion/Ioff-ratio. In this work a device process using locally strained silicon by means of template-assisted self-assembly is proposed.
Keywords :
MOSFET; dielectric materials; MOSFET devices; carrier mobility; device architectures; disposable dot field effect transistor; high-K gate dielectrics; locally strained silicon; metal gates; multigate devices; overlay requirements; process flow; template-assisted self-assembly; ultra thin body devices; Capacitive sensors; Dielectric materials; Etching; FETs; Germanium silicon alloys; High K dielectric materials; Lattices; MOSFET circuits; Silicon germanium; Substrates;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4244-2325-5
Electronic_ISBN :
978-1-4244-2326-2
DOI :
10.1109/ASDAM.2008.4743317
