Title :
Reliability aspects of GaN-HEMTs on composite substrates
Author :
Zanon, F. ; Danesin, F. ; Tazzoli, A. ; Meneghini, M. ; Ronchi, N. ; Chini, A. ; Bove, P. ; Langer, R. ; Zanoni, E. ; Meneghesso, G.
Author_Institution :
Dept. of Inf. Eng., Univ. of Padova, Padova
Abstract :
This paper shows electrical characterizations and reliability analysis performed on AlGaN/GaN HEMTs processed on epitaxial layers grown on composite substrates. The results are very promising for the fabrication of low cost high power microwave transistors for wireless communication systems. The composite substrates constitute a valuable alternative to the silicon since better thermal properties are expected.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; microwave power transistors; power HEMT; radiocommunication; semiconductor device reliability; substrates; wide band gap semiconductors; AlGaN-GaN; HEMT; composite substrates; electrical characterizations; high power microwave transistor fabrication; reliability analysis; thermal properties; wireless communication system; Aluminum gallium nitride; Costs; Epitaxial layers; Fabrication; Gallium nitride; HEMTs; MODFETs; Performance analysis; Power system reliability; Substrates;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4244-2325-5
Electronic_ISBN :
978-1-4244-2326-2
DOI :
10.1109/ASDAM.2008.4743324
