Title :
Laser heterostructures AlGaInAsSb/GaInSbAsP/GaSb(InAs) for middle infra-red range
Author :
Kuchinskii, V.I. ; Vasil, V.I. ; Gagis, G.S. ; Deryagin, A.G. ; Dudelev, V.V.
Author_Institution :
Ioffe Physico-Tech. Inst., St Petersburg, Russia
Abstract :
This work shows that pentanary solid solutions (PSS) AlGaInAsSb and GaInSbAsP isoperiodic to GaSb and InAs substrates give wide possibilities to control heterojunction parameters. Heterojunctions I, II and III types can be formed for the lightwave range λ=3-4μm. Valence and conductivity band offsets can be varied in a wide range at a constant energy gap of the active region. AlGaInAsSb/GaInSbAsP/GaSb(InAs) heterostructures were grown from Sb-rich melts by liquid phase epitaxy (LPE) method at 570-600 °C.
Keywords :
III-V semiconductors; aluminium compounds; antimony compounds; arsenic compounds; gallium compounds; indium compounds; liquid phase epitaxial growth; optical fabrication; semiconductor lasers; substrates; 3 to 4 micron; 570 to 600 C; AlGaInAsSb; AlGaInAsSb/GaInSbAsP/GaSb(InAs) heterostructures; GaInSbAsP; GaSb; InAs; Sb-rich melts; active region energy gap; conductivity band offsets; heterojunction parameters; laser heterostructures; liquid phase epitaxy method; middle infra-red range; pentanary solid solutions; substrates; valence band offset; Epitaxial growth; Gas lasers; Heterojunctions; Optical materials; Optical pumping; Optical surface waves; Photonic band gap; Solids; Substrates; Temperature;
Conference_Titel :
Laser and Fiber-Optical Networks Modeling, 2003. Proceedings of LFNM 2003. 5th International Workshop on
Print_ISBN :
0-7803-7709-5
DOI :
10.1109/LFNM.2003.1246079
