• DocumentCode
    2297267
  • Title

    Characterisation of organic field effect transistor structures by micro-Raman spectroscopy, AFM and XRD methods

  • Author

    Srnanek, R. ; Kovac, J. ; Jakabovic, J. ; Kovac, J. ; Irmer, G. ; Dobrocka, Edmund ; Hasko, D.

  • Author_Institution
    Dept. of Microelectron., Slovak Univ. of Technol., Bratislava
  • fYear
    2008
  • fDate
    12-16 Oct. 2008
  • Firstpage
    255
  • Lastpage
    258
  • Abstract
    Three independent methods show clear evidence that pentacene layers grown on parylene C layer had better molecular microstructure compared to films grown on SiO2 surface. The electrical measurements confirmed these results and carrier mobility of 0.15 cm2 /Vs was obtained in OFET devices.
  • Keywords
    Raman spectroscopy; atomic force microscopy; carrier mobility; crystal microstructure; organic compounds; organic field effect transistors; silicon compounds; AFM method; SiO2; XRD method; carrier mobility; electrical measurements; microRaman spectroscopy; molecular microstructure; organic field effect transistor structures; parylene C layer; pentacene layers; Dielectric materials; Dielectric substrates; Laser excitation; Laser modes; OFETs; Pentacene; Size measurement; Spectroscopy; X-ray diffraction; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on
  • Conference_Location
    Smolenice
  • Print_ISBN
    978-1-4244-2325-5
  • Electronic_ISBN
    978-1-4244-2326-2
  • Type

    conf

  • DOI
    10.1109/ASDAM.2008.4743331
  • Filename
    4743331
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2297267