Title :
Characterisation of organic field effect transistor structures by micro-Raman spectroscopy, AFM and XRD methods
Author :
Srnanek, R. ; Kovac, J. ; Jakabovic, J. ; Kovac, J. ; Irmer, G. ; Dobrocka, Edmund ; Hasko, D.
Author_Institution :
Dept. of Microelectron., Slovak Univ. of Technol., Bratislava
Abstract :
Three independent methods show clear evidence that pentacene layers grown on parylene C layer had better molecular microstructure compared to films grown on SiO2 surface. The electrical measurements confirmed these results and carrier mobility of 0.15 cm2 /Vs was obtained in OFET devices.
Keywords :
Raman spectroscopy; atomic force microscopy; carrier mobility; crystal microstructure; organic compounds; organic field effect transistors; silicon compounds; AFM method; SiO2; XRD method; carrier mobility; electrical measurements; microRaman spectroscopy; molecular microstructure; organic field effect transistor structures; parylene C layer; pentacene layers; Dielectric materials; Dielectric substrates; Laser excitation; Laser modes; OFETs; Pentacene; Size measurement; Spectroscopy; X-ray diffraction; X-ray scattering;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4244-2325-5
Electronic_ISBN :
978-1-4244-2326-2
DOI :
10.1109/ASDAM.2008.4743331
