Title :
A tunable flipflop-based frequency divider up to 113 GHz and a fully differential 77GHz push-push VCO in SiGe BiCMOS technology
Author :
Trotta, S. ; Li, H. ; Trivedi, V.P. ; John, J.
Author_Institution :
Freescale Semicond., Munich, Germany
Abstract :
We present a tunable flipflop-based frequency divider and a fully differential push-push VCO designed in a 200 GHz fT SiGe BiCMOS technology. A new technique for tuning the sensitivity of the divider in the frequency range of interest is presented. The chip works from 60 GHz up to 113 GHz. The VCO is based on a new topology which allows generating differential push-push outputs. The VCO shows a tuning range larger than 7 GHz. The phase noise is 75 dBc/Hz at 100 kHz offset. The chip shows a frequency drift of 12.3 MHz/C. The fundamental signal suppression is larger than 50 dB. The output power is 2times5 dBm. At a 3.3 V supply, the circuits consume 35 mA and 65 mA, respectively.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC oscillators; circuit tuning; field effect MIMIC; flip-flops; frequency dividers; millimetre wave frequency convertors; millimetre wave oscillators; phase noise; semiconductor materials; voltage-controlled oscillators; BiCMOS technology; SiGe; current 35 mA; current 65 mA; frequency 200 GHz; frequency 60 GHz to 113 GHz; frequency divider; frequency drift; fully differential push-push VCO; fundamental signal suppression; phase noise; tunable flipflop; voltage 3.3 V; BiCMOS integrated circuits; Circuit optimization; Frequency conversion; Germanium silicon alloys; Phase noise; Silicon germanium; Topology; Tunable circuits and devices; Tuning; Voltage-controlled oscillators; Bipolar Technology; Flipflop; Frequency Divider; High Frequency; Latch; SiGe; VCO; mm-wave VCO;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-3377-3
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2009.5135487