Title :
A DC-102GHz broadband amplifier in 0.12µm SiGe BiCMOS
Author :
Kim, Joohwa ; Buckwalter, James F.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, CA, USA
Abstract :
An ultra-wideband amplifier scheme is realized with two cascaded stages that are equalized for high-bandwidth and low gain ripple. The amplifier is implemented in a 0.12 mum SiGe BiCMOS process and achieves a 3 dB bandwidth of 102 GHz. The gain is 10 dB with less than 1.5 dB gain-ripple and group-delay variation under +/- 6 ps over the entire 3 dB bandwidth. The chip occupies an area of 0.29 mm2 including the pads and consumes 73 mW from a 2 V supply.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC amplifiers; UHF amplifiers; UHF integrated circuits; VHF amplifiers; feedback amplifiers; field effect MIMIC; field effect MMIC; millimetre wave amplifiers; semiconductor materials; wideband amplifiers; BiCMOS; SiGe; UWB; bandwidth 102 GHz; broadband amplifier; frequency 0 GHz to 102 GHz; gain 10 dB; gain-ripple; group-delay variation; power 73 mW; size 0.12 mum; ultrawideband amplifier scheme; voltage 2 V; wideband circuits; Bandwidth; BiCMOS integrated circuits; Broadband amplifiers; Capacitance; Germanium silicon alloys; Integrated circuit technology; Millimeter wave technology; Optical amplifiers; Silicon germanium; Wideband; BiCMOS; SiGe; broadband amplifiers; darlington feedback; traveling wave;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-3377-3
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2009.5135488
