Title :
A 1.8mW Wideband 57dBΩ transimpedance amplifier in 0.13µm CMOS
Author :
Aflatouni, Firooz ; Hashemi, Hossein
Author_Institution :
Dept. of Electr. Eng. - Electrophys., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
In multi-hundred Gb/s parallel optical links for on-chip or chip-to-chip data transfer, system components should be very low power while occupying small chip areas. This paper presents a low power transimpedance amplifier (TIA) that is based on regulated cascode with vertically stacked inductors, and can operate up to 10 Gb/s in presence of 370 fF input capacitance. The 0.13 mum CMOS TIA consumes 1.8 mW to provide 57 dBOmega transimpedance gain, while occupying 150 mumtimes100 mum active area. The measured input referred current noise of the differential TIA is less than 30 pA/radicHz across 8 GHz.
Keywords :
CMOS integrated circuits; MMIC amplifiers; field effect MMIC; high-speed integrated circuits; integrated optoelectronics; low-power electronics; operational amplifiers; optical links; optical receivers; wideband amplifiers; CMOS optoelectronic receivers; bit rate 10 Gbit/s; capacitance; capacitance 370 fF; differential transimpedance amplifier; frequency 8 GHz; high speed integrated circuits; input referred current noise; low power transimpedance amplifier; parallel optical links; power 1.8 mW; size 0.13 mum; transimpedance gain; vertically stacked inductors; wideband transimpedance amplifier; Bandwidth; Broadband amplifiers; Capacitance; Character generation; Optical amplifiers; Optical feedback; Optical fiber communication; Optical noise; Photodiodes; Resistors; CMOS optoelectronic receivers; high speed integrated circuits; transimpedance amplifier;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-3377-3
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2009.5135489
