• DocumentCode
    2297504
  • Title

    DRIE and Bonding Assisted Low Cost MEMS Processing of In-plane HAR Inertial Sensors

  • Author

    Rajaraman, V. ; Makinwa, K.A.A. ; French, P.J.

  • Author_Institution
    Dept. of Microelectron., Delft Univ. of Technol., Delft
  • fYear
    2008
  • fDate
    12-16 Oct. 2008
  • Firstpage
    327
  • Lastpage
    330
  • Abstract
    We present a simple, flexible and low cost MEMS fabrication process, developed using deep reactive ion etching (DRIE) and wafer bonding technologies, for manufacturing in-plane high aspect ratio (HAR) inertial sensors. Among examples, the design and fabrication results of a two axis inertial device are presented. Fabricated device thickness ranged up to 140 mum and a HAR of 28 was obtained. Compared to the existing approaches reported in literature, the salient features of the presented process are: single-sided single-wafer processing using just two lithographic masks, capability to fabricate standalone MEMS as well as CMOS compatible MEMS post-processing via process variations, the use of plasma etching for wafer thinning that facilitates stictionless dry-release of MEMS, and its suitability for batch processing.
  • Keywords
    lithography; micromechanical devices; sensors; sputter etching; wafer bonding; CMOS compatible MEMS postprocessing; DRIE; batch processing; bonding assisted low cost MEMS processing; deep reactive ion etching; high aspect ratio; in-plane HAR inertial sensors; lithographic masks; plasma etching; single-sided single-wafer processing; two axis inertial device; wafer bonding technologies; wafer thinning; CMOS process; Costs; Etching; Fabrication; Flexible manufacturing systems; Manufacturing processes; Micromechanical devices; Plasma applications; Plasma materials processing; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on
  • Conference_Location
    Smolenice
  • Print_ISBN
    978-1-4244-2325-5
  • Electronic_ISBN
    978-1-4244-2326-2
  • Type

    conf

  • DOI
    10.1109/ASDAM.2008.4743350
  • Filename
    4743350