DocumentCode
2297650
Title
Characterization of Semiconductor Devices at Very High Temperatures
Author
Borthen, Peter ; Wachutka, Gerhard
Author_Institution
Inst. for Phys. of Electrotechnol., Munich Univ. of Technol., Munchen
fYear
2008
fDate
12-16 Oct. 2008
Firstpage
71
Lastpage
74
Abstract
We present a dedicated measurement set-up for the electrical characterization of semiconductor devices and microsystems under very high temperature conditions. The experimental set-up comprises a vacuum system as basic unit and a number of sample stages for different applications. The system enables measurements in the temperature range between room temperature and at least 700degC. We give a detailed description of the measurement system, sample mounting techniques, and exemplary measurements on silicon and SiC devices and test structures.
Keywords
high-temperature electronics; mountings; semiconductor devices; silicon; silicon compounds; SiC; electrical characterization; measurement system; mounting techniques; semiconductor devices; vacuum system; very high temperatures; Circuits; Distortion measurement; Extraterrestrial measurements; Heating; Semiconductor devices; System testing; Temperature control; Temperature distribution; Temperature measurement; Vacuum systems;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on
Conference_Location
Smolenice
Print_ISBN
978-1-4244-2325-5
Electronic_ISBN
978-1-4244-2326-2
Type
conf
DOI
10.1109/ASDAM.2008.4743361
Filename
4743361
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