• DocumentCode
    2297650
  • Title

    Characterization of Semiconductor Devices at Very High Temperatures

  • Author

    Borthen, Peter ; Wachutka, Gerhard

  • Author_Institution
    Inst. for Phys. of Electrotechnol., Munich Univ. of Technol., Munchen
  • fYear
    2008
  • fDate
    12-16 Oct. 2008
  • Firstpage
    71
  • Lastpage
    74
  • Abstract
    We present a dedicated measurement set-up for the electrical characterization of semiconductor devices and microsystems under very high temperature conditions. The experimental set-up comprises a vacuum system as basic unit and a number of sample stages for different applications. The system enables measurements in the temperature range between room temperature and at least 700degC. We give a detailed description of the measurement system, sample mounting techniques, and exemplary measurements on silicon and SiC devices and test structures.
  • Keywords
    high-temperature electronics; mountings; semiconductor devices; silicon; silicon compounds; SiC; electrical characterization; measurement system; mounting techniques; semiconductor devices; vacuum system; very high temperatures; Circuits; Distortion measurement; Extraterrestrial measurements; Heating; Semiconductor devices; System testing; Temperature control; Temperature distribution; Temperature measurement; Vacuum systems;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on
  • Conference_Location
    Smolenice
  • Print_ISBN
    978-1-4244-2325-5
  • Electronic_ISBN
    978-1-4244-2326-2
  • Type

    conf

  • DOI
    10.1109/ASDAM.2008.4743361
  • Filename
    4743361