Title :
Sub-0.5 dB NF broadband low-noise amplifier using a novel InGaAs/InAlAs/InP pHEMT
Author :
Boudjelida, B. ; Sobih, A. ; Arshad, S. ; Bouloukou, A. ; Boulay, S. ; Sly, J. ; Missous, M.
Author_Institution :
Sch. of Electron. & Electr. Eng., Univ. of Manchester, Manchester
Abstract :
Linear and non-linear modelling of a novel ultra-low noise InGaAs/InAlAs pHEMTs have been used to design a low noise amplifier operating from 0.3 to 2 GHz. The LNA has ~ 0.4 dB NF across the whole frequency band, power gain of 26 dB at 1.4 GHz and IP3 of 14 dBm, making it a good candidate for the aperture array concept of the Square Kilometre Array (SKA) telescope, GSM, GPS, civil and military DAB.
Keywords :
HEMT circuits; III-V semiconductors; UHF amplifiers; aluminium compounds; gallium arsenide; indium compounds; low noise amplifiers; wideband amplifiers; GPS; GSM; InGaAs-InAlAs-InP; LNA; Square Kilometre Array telescope; aperture array; broadband low-noise amplifier; civil-military DAB; frequency 0.3 GHz to 2 GHz; frequency 1.4 GHz; linear modelling; nonlinear modelling; pHEMT; power gain; Apertures; Broadband amplifiers; Frequency; Gain; Indium compounds; Indium gallium arsenide; Indium phosphide; Low-noise amplifiers; Noise measurement; PHEMTs;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4244-2325-5
Electronic_ISBN :
978-1-4244-2326-2
DOI :
10.1109/ASDAM.2008.4743362
