Characteristics of high frequency and high density through silicon vias (TSVs)

TSV has now been a hotspot of the industry for years. Comparing with the wire-bonding, the technology populated in the last decade, Through Silicon Via (TSV) has merits of shorter wiring route, better signal integrity, larger bandwidth, lower power consumption and smaller packaging size. Undoubtedly, the TSV is treated by the industry to be the next generation of packaging solution to replace the wire-bonding. However, the TSV engineering has to conquer several difficulties, e.g. drilling technique, via filling technique, via filling material, stacking and bonding technique, and handling after the wafer thinning, etc. Therefore the standardization of the TSV still has a long way to go. This paper illustrates the initial achievement concerning with via filling material and corresponding high frequency and high density advantages that acquired by Institute of Microelectronics, Chinese Academy of Sciences.