Title :
Fully integrated 23dBm transmit chain with on-chip power amplifier and balun for 802.11a application in standard 45nm CMOS process
Author :
Kidwai, Adil A. ; Nazimov, Anna ; Eilat, Yishai ; Degani, Ofir
Author_Institution :
Intel Corp., Hillsboro, OR, USA
Abstract :
A fully integrated transmit chain for 802.11a band with on-chip power amplifier and on-chip balun matching network in 45 nm standard digital CMOS process demonstrates saturated power of +23 dBm. The average efficiency is +5% and peak efficiency is +15%. A standalone class AB CMOS power amplifier with on-chip balun matching network was also produced and detailed characterization data is presented. Using digital predistortion, an EVM of -28 dB is achieved at 19 dBm for 5 GHz band and 2.5 GHz band for standalone power amplifier.
Keywords :
CMOS digital integrated circuits; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; baluns; wireless LAN; 802.11a application; balun matching network; class AB digital CMOS power amplifier; efficiency 15 percent; efficiency 5 percent; frequency 2.5 GHz; frequency 5 GHz; integrated transmit chain; on-chip power amplifier; size 45 nm; CMOS process; Costs; Impedance matching; Inductors; Network-on-a-chip; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Transmitters; Wireless LAN; EVM; PAPD; Power amplifiers;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-3377-3
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2009.5135538
