DocumentCode
2298400
Title
Prediction of package warpage combined experimental and simulation for four maps substrate
Author
Wu, R.W. ; Chen, C.K. ; Tsao, Lung-Chuan
Author_Institution
NXP Semicond., Taiwan
fYear
2010
fDate
16-19 Aug. 2010
Firstpage
576
Lastpage
581
Abstract
As electronic devices become lighter, thinner, shorter, and smaller, IC packages follow. Low-profile type packages are reduced in thickness, so the stiffness of thin type packages is weaker due to the thermo-mechanical effects of manufacturing processes, testing, and operations. Due to the different temperatures in those processes, and the differences in coefficient thermal expansion (CTE) of each material, the mismatch of material properties induces package warpage and stress distribution. Both of these phenomena will change the package outline, in turn generating passivation cracks, pattern shift, loose bond balls, wire breakage, voids, buckling, hillocks, delamination, and/or de-bonding. Consequently, the reliability of microelectronic packages will be decreased and assembly quality lowered.
Keywords
integrated circuit packaging; integrated circuit reliability; substrates; thermal expansion; thermal management (packaging); IC package; assembly quality; coefficient thermal expansion; four maps substrate; low profile type package; microelectronic package reliability; package warpage prediction; Compounds; Curing; Electronic packaging thermal management; Materials; Semiconductor device measurement; Semiconductor device modeling; Thermomechanical processes;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology & High Density Packaging (ICEPT-HDP), 2010 11th International Conference on
Conference_Location
Xi´an
Print_ISBN
978-1-4244-8140-8
Type
conf
DOI
10.1109/ICEPT.2010.5583800
Filename
5583800
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