Title :
Simulation of a three-phase AC-AC boost converter to compensate for voltage sags
Author :
Hietpas, Steven M. ; Pecen, Recayi
Author_Institution :
Dept. of Electr. Eng., South Dakota State Univ., Brookings, SD, USA
Abstract :
Voltage sags or short term reductions in the voltage levels constitute 68% of all power disturbances. Voltage sags are becoming crucial problems in many process industry plants as well as in rural customers, resulting in lower production and serious equipment damage. A possible method to compensate for voltage sags is to install an AC-AC boost converter that is capable of compensating at a much higher bandwidth than the typical voltage sag event. The AC-AC boost converter of this paper incorporates the use of bi-directional insulated gate bipolar transistors (IGBTs) in a relatively well-understood DC-DC boost converter topology. Most voltage sags are due to a faulted circuit or a major increase of load current. The resulting neutral return current produces an increase in the measured voltage. On a half cycle-by-cycle basis, the peak voltage can be used as feedback where the converter can maintain regulated supply voltage to the end user. Simulation results show that a three-phase AC-AC boost converter may sense and improve the voltage sags and power quality quickly due to the high-speed IGBT switching operations
Keywords :
AC-AC power convertors; insulated gate bipolar transistors; power supply quality; voltage control; IGBT; bi-directional insulated gate bipolar transistors; equipment damage; faulted circuit; feedback; half cycle-by-cycle basis; peak voltage; power quality; process industry plants; regulated supply voltage; rural customers; three-phase AC-AC boost converter; voltage sags compensation; Bandwidth; Bidirectional control; Circuit faults; Circuit topology; Current measurement; DC-DC power converters; Insulated gate bipolar transistors; Power quality; Production; Voltage fluctuations;
Conference_Titel :
Rural Electric Power Conference, 1998. Papers Presented at the 42nd Annual Conference
Conference_Location :
St. Louis, MO
Print_ISBN :
0-7803-4459-6
DOI :
10.1109/REPCON.1998.666945