DocumentCode
2298855
Title
Phototransistor based Time-of-Flight range finding sensor in an 180 nm CMOS process
Author
Kostov, Plamen ; Davidovic, Milos ; Hofbauer, Michael ; Gaberl, Wolfgang ; Zimmermann, Horst
Author_Institution
Inst. of Electrodynamics, Microwave & Circuit Eng., Vienna Univ. of Technol., Vienna, Austria
fYear
2012
fDate
23-27 Sept. 2012
Firstpage
28
Lastpage
29
Abstract
Time-of-Flight (TOF) sensors using different kinds of integrated phototransistors as photodetectors are presented in this work. The sensors as well as the phototransistors are implemented in a standard 180 nm CMOS process. A fill factor of 67 % is reached. At optimal working points of the phototransistors standard deviations better than 2.6 mm are achieved.
Keywords
CMOS integrated circuits; distance measurement; integrated optoelectronics; photodetectors; phototransistors; fill factor; integrated phototransistors; photodetectors; phototransistor based time-of-flight range finding sensor; size 180 nm; standard CMOS process; CMOS integrated circuits; Optical saturation; Optical sensors; Optical variables measurement; Phototransistors; Robot sensing systems; Standards; PIN; Phototransistor; TOF sensor; Time of flight; depth sensor; distance measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2012 IEEE
Conference_Location
Burlingame, CA
Print_ISBN
978-1-4577-0731-5
Type
conf
DOI
10.1109/IPCon.2012.6358472
Filename
6358472
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