DocumentCode :
2299084
Title :
1 V mixed-signal circuits in a 0.5 μm CMOS technology
Author :
Bazarjani, Seyfi ; Snelgrove, Martin ; Monson, Trevor ; MacElwee, Tom
Author_Institution :
Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada
Volume :
3
fYear :
1997
fDate :
9-12 Jun 1997
Firstpage :
1860
Abstract :
Device characteristics for natural threshold voltage MOSFETs fabricated in a 0.5 μm CMOS technology show that saturation current follows an α-power law model (1DS~(νGS-V t)α) with α=1.3. A 1 V power supply voltage is found to be close to optimum for mixed-signal circuits using these low-V, (Vt=0.2 V) MOSFETs. Experimental results at 1 V indicate a 360 ps logic SUM delay for a full adder circuit using natural MOSFETs. A 1 V mixed digital/analog standard cell library is developed using natural MOSFETs. Performance of the top 15 high-usage logic gates and three analog cells (switch, opamp, and comparator) operating at 1 V are discussed. Based on measured results and simulations, the 1 V digital library, using natural MOSFETs, is 10X more energy efficient than the 3.3 V library that uses normal MOSFETs
Keywords :
CMOS integrated circuits; MOSFET; adders; cellular arrays; leakage currents; mixed analogue-digital integrated circuits; α-power law model; 0.5 micron; 1 V; 360 ps; CMOS technology; analog cells; digital/analog standard cell library; energy efficiency; full adder circuit; high-usage logic gates; logic SUM delay; mixed-signal circuits; natural threshold voltage MOSFETs; power supply voltage; saturation current; Adders; CMOS technology; Delay; Logic circuits; MOSFETs; Power supplies; Semiconductor device modeling; Software libraries; Switches; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 1997. ISCAS '97., Proceedings of 1997 IEEE International Symposium on
Print_ISBN :
0-7803-3583-X
Type :
conf
DOI :
10.1109/ISCAS.1997.621511
Filename :
621511
Link To Document :
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