Two 24 GHz receiver front-ends in 130-nm CMOS using SOP technology

Author

Törmänen, Markus ; Sjöland, Henrik

Author_Institution

Dept. of Electr. & Inf. Technol., Lund Univ., Lund, Sweden

fYear

2009

fDate

7-9 June 2009

Firstpage

559

Lastpage

562

Abstract

Two 24 GHz 130-nm CMOS receiver front-ends using System-on-Package (SOP) technology are demonstrated. CMOS dies featuring a two-stage LNA, a passive mixer, and output buffers are flip-chipped to a glass carrier featuring low loss baluns. One design uses glass baluns for both RF and LO input, whereas the other uses an active RF balun on-chip. The fully differential front-end measures; 20.7dB conversion gain, 7.8 dB NF, -23.3 dBm CP_1dB, -12.6 dBm IIP3, 16.3 dBm IIP2, and 44 dB LO to RF isolation. The single-ended input front-end measures; 14.7 dB conversion gain, 8.5 dB NF, -21.1 dBm CP_1dB, -10.4 dBm IIP3, 17.6 dBm IIP2, and 51 dB LO to RF isolation.

Keywords

CMOS integrated circuits; baluns; low noise amplifiers; microwave receivers; radio receivers; system-on-chip; LNA; active RF balun on-chip; differential front-end measures; flip-chipped; frequency 24 GHz; glass carrier; low noise amplifiers; passive mixer; receiver front-ends; size 130 nm; system-on-package technology; CMOS technology; Gain measurement; Glass; Impedance matching; Inductors; Microwave technology; Millimeter wave technology; Noise cancellation; Radio frequency; Topology; CMOS integrated circuits; Flip-chip devices; Frequency conversion; Microwave mixers; Microwave receivers;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE

Conference_Location

Boston, MA

ISSN

1529-2517

Print_ISBN

978-1-4244-3377-3

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2009.5135603

Filename

5135603