DocumentCode :
2299603
Title :
An overview of SiC power devices
Author :
Agarwal, Anant K.
Author_Institution :
Cree Inc., Durham, NC, USA
fYear :
2010
fDate :
Nov. 29 2010-Dec. 1 2010
Firstpage :
1
Lastpage :
4
Abstract :
Considering the recent global interest in reducing energy consumption, SiC technology is now ready to enable the step to the next plateau for efficiency standards. The reduction in power losses that this technology provides in power conversion systems is enabling a quicker adoption of alternative energy systems, improving existing technology and allowing a reduction in future fossil-fuel consumption. As these devices are further optimized in the coming years we can expect even better performance results. SiC Schottky diodes that are commercially available today and the pending introduction of SiC DMOSFETs will help develop much more efficient next generation alternative energy systems and greatly improve power supply, motor drive and UPS efficiencies. The on-going development of 15 kV SiC IGBTs will enable the more efficient interfaces for Distributed Energy Resources to the electric grid.
Keywords :
MOSFET; Schottky diodes; power semiconductor devices; SiC DMOSFET; SiC IGBT; SiC Schottky diodes; SiC power devices; SiC technology; UPS efficiencies; distributed energy resources; efficiency standards; electric grid; energy consumption; fossil-fuel consumption; motor drive; next generation alternative energy systems; power conversion systems; power loss; power supply; IGBT; Power MOSFET; Schottky Diodes; Silicon Carbide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power, Control and Embedded Systems (ICPCES), 2010 International Conference on
Conference_Location :
Allahabad
Print_ISBN :
978-1-4244-8543-7
Type :
conf
DOI :
10.1109/ICPCES.2010.5698670
Filename :
5698670
Link To Document :
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