DocumentCode
2299786
Title
P-type δ-doping of highly-strained VCSELs for 25 Gbps operation
Author
Zheng, Yan ; Lin, Chin-Han ; Barve, Ajit V. ; Coldren, Larry A.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, Santa Barbara, CA, USA
fYear
2012
fDate
23-27 Sept. 2012
Firstpage
131
Lastpage
132
Abstract
We present the utilization of δ-doping to mitigate the rise in nonlinear gain compression in highly-strained InGaAs VCSELs and compare it with unstrained and undoped active region designs. High-speed 25 Gbps operation is also demonstrated.
Keywords
gallium arsenide; indium compounds; surface emitting lasers; InGaAs; P-type δ-doping; VCSEL; bit rate 25 Gbit/s; nonlinear gain compression; vertical cavity surface emitting lasers; Bandwidth; Damping; Doping; Gallium arsenide; Modulation; Optical interconnections; Vertical cavity surface emitting lasers; δ-doping; VCSELs; highly-strained; optical interconnect;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2012 IEEE
Conference_Location
Burlingame, CA
Print_ISBN
978-1-4577-0731-5
Type
conf
DOI
10.1109/IPCon.2012.6358524
Filename
6358524
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