Graded-barrier heterostructures for photovoltaic split-off infrared detection

Author

Perera, A.G.U. ; Lao, Y.F. ; Pitigala, P.K.D.D.P. ; Khanna, S.P. ; Li, L.H. ; Linfield, E.H.

Author_Institution

Dept. of Phys. & Astron., Georgia State Univ., Atlanta, GA, USA

fYear

2012

fDate

23-27 Sept. 2012

Firstpage

163

Lastpage

164

Abstract

We report photovoltaic infrared detectors based on graded-barrier asymmetric heterostructures. Detectors with a single period structure showed room temperature operation with a zero-response threshold of ~4 μm, and a comparable detectivity to 30-period photoconductive split-off detectors reported previously. An additional long-wavelength response peak of up to 8 μm was also observed when the operating temperature was lowered to 80 K. The detectivities at 80 K for wavelenghs of 2.5 μm and 5 μm were 2×10¹³ and 3×10¹² cm Hz^1/2/W, respectively.

Keywords

infrared detectors; photoconducting devices; photovoltaic effects; graded barrier asymmetric heterostructures; long wavelength response peak; photoconductive split-off detectors; photovoltaic split-off infrared detection; single period structure; temperature 293 K to 298 K; temperature 80 K; wavelength 2.5 mum; wavelength 5 mum; wavelength 8 mum; zero response threshold; Dark current; Detectors; Educational institutions; Energy states; Periodic structures; Photovoltaic systems; Heterojunction; III–V Semiconductor; Infrared Detectors; Photovoltaics;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics Conference (IPC), 2012 IEEE

Conference_Location

Burlingame, CA

Print_ISBN

978-1-4577-0731-5

Type

conf

DOI

10.1109/IPCon.2012.6358541

Filename

6358541