DocumentCode :
2300097
Title :
Polarization-dependent photocurrent enhancement in metamaterial-integrated quantum dot infrared detectors
Author :
Sharma, Yagya D. ; Jun, Young Chul ; Kim, Jun Oh ; Brener, Igal ; Krishna, Sanjay
Author_Institution :
Dept. of ECE, Univ. of New Mexico, Albuquerque, NM, USA
fYear :
2012
fDate :
23-27 Sept. 2012
Firstpage :
171
Lastpage :
172
Abstract :
We present the design, fabrication, and characterization of quantum dots-in-a-well infrared detectors integrated with a planar metamaterial layer. The resonantly excited metamaterial layer provides strongly enhanced optical fields and the increased photocurrent is obtained at the metamaterial resonant frequency.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; integrated optics; metamaterials; optical design techniques; optical fabrication; photoconductivity; photoemission; semiconductor quantum dots; semiconductor quantum wells; InGaAs; integrated optics; metamaterial resonant frequency; optical design; optical fabrication; planar metamaterial layer; polarization-dependent photocurrent enhancement; quantum dot-in-a-well infrared detectors; Arrays; Infrared detectors; Metamaterials; Photoconductivity; Quantum dots; Resonant frequency; Semiconductor device measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Conference (IPC), 2012 IEEE
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4577-0731-5
Type :
conf
DOI :
10.1109/IPCon.2012.6358545
Filename :
6358545
Link To Document :
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