Title :
1.3 micron VCSEL arrays for telecom applications
Author :
Chirovsky, L.M.F. ; Naone, R.L. ; Jackson, A.W. ; Prakash, S.R. ; Galt, D. ; Thompson, L.R. ; Feld, S.A. ; Wasserbauer, J.G. ; Dalberth, M.J. ; Smith, J. ; Hindi, J.J. ; Kisker, D.W.
Author_Institution :
Cielo Commun., Broomfield, CO, USA
Abstract :
In this work, we have reported the first arrays of GaAs-based 1.3 micron VCSELs and described their operation under both DC and modulated conditions. Excellent uniformity of key operating parameters was observed. In addition, we have demonstrated excellent performance over temperature as well as transmission over extended distances of single mode fiber. Further, we have presented the initial reliability data for these devices under accelerated stress conditions. Together, these results suggest that GaAs based 1.3 micron VCSELs will be suitable for at least OC-48 IR communication applications with array architectures that offer 3 to 4 times increased density over small form factor devices, as well as lowered cost and outstanding performance.
Keywords :
III-V semiconductors; gallium arsenide; infrared sources; laser reliability; laser transitions; life testing; optical testing; optical transmitters; semiconductor device reliability; semiconductor device testing; surface emitting lasers; telecommunication network reliability; 850 nm; DC condition; GaAs-based VCSEL arrays; OC-48 IR communication applications; accelerated stress conditions; array architectures; electro optically modulated; factor devices; key operating parameters; reliability data; single mode fiber; temperature; Antenna arrays; Bit error rate; Broadband antennas; Delay lines; Optical control; Optical fiber devices; Optimized production technology; Spectral analysis; Telecommunications; Vertical cavity surface emitting lasers;
Conference_Titel :
Optical Fiber Communication Conference and Exhibit, 2002. OFC 2002
Print_ISBN :
1-55752-701-6
DOI :
10.1109/OFC.2002.1036267
