Title :
Electro-mechanically induced GHz rate optical frequency modulation in silicon
Author :
Tallur, Siddharth ; Bhave, Sunil A.
Author_Institution :
OxideMEMS Lab., Cornell Univ., Ithaca, NY, USA
Abstract :
We present a monolithic silicon acousto-optic frequency modulator (AOFM) operating at 1.09GHz. Employing mechanical levers to enhance displacement of the optical resonator enables an optical frequency modulation index of 0.067.
Keywords :
acousto-optical modulation; elemental semiconductors; frequency modulation; optical resonators; silicon; Si; acousto-optic frequency modulator; electro-mechanically induced GHz rate; frequency 1.09 GHz; mechanical levers; monolithic silicon; optical frequency modulation; optical resonator; Amplitude modulation; Frequency modulation; Optical modulation; Optical pumping; Optical resonators; Resonant frequency;
Conference_Titel :
Photonics Conference (IPC), 2012 IEEE
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4577-0731-5
DOI :
10.1109/IPCon.2012.6358590
