• DocumentCode
    2300936
  • Title

    Role of growth temperature on the physical characteristics of GaAsSb/GaAs QW lasers

  • Author

    Hossain, Nadir ; Hild, Konstanze ; Jin, Shirong ; Sweeney, Stephen J. ; Yu, Shui-Qing ; Johnson, Shane R. ; Ding, Ding ; Zhang, Yong-Hang

  • Author_Institution
    Adv. Technol. Inst., Univ. of Surrey, Guildford, UK
  • fYear
    2010
  • fDate
    7-11 Nov. 2010
  • Firstpage
    59
  • Lastpage
    60
  • Abstract
    Thermally activated carrier leakage via defects is found to be very sensitive to the growth temperature of GaAsSb quantum wells. Optimization of the growth temperature leads to a low Jth/QW of 138A/cm2 at RT.
  • Keywords
    III-V semiconductors; crystal defects; gallium arsenide; quantum well lasers; semiconductor quantum wells; GaAsSb-GaAs; QW lasers; defects; growth temperature; quantum wells; thermally activated carrier leakage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IEEE Photonics Society, 2010 23rd Annual Meeting of the
  • Conference_Location
    Denver, CO
  • ISSN
    -
  • Print_ISBN
    978-1-4244-5368-9
  • Electronic_ISBN
    -
  • Type

    conf

  • DOI
    10.1109/PHOTONICS.2010.5698756
  • Filename
    5698756
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2300936