DocumentCode :
2300936
Title :
Role of growth temperature on the physical characteristics of GaAsSb/GaAs QW lasers
Author :
Hossain, Nadir ; Hild, Konstanze ; Jin, Shirong ; Sweeney, Stephen J. ; Yu, Shui-Qing ; Johnson, Shane R. ; Ding, Ding ; Zhang, Yong-Hang
Author_Institution :
Adv. Technol. Inst., Univ. of Surrey, Guildford, UK
fYear :
2010
fDate :
7-11 Nov. 2010
Firstpage :
59
Lastpage :
60
Abstract :
Thermally activated carrier leakage via defects is found to be very sensitive to the growth temperature of GaAsSb quantum wells. Optimization of the growth temperature leads to a low Jth/QW of 138A/cm2 at RT.
Keywords :
III-V semiconductors; crystal defects; gallium arsenide; quantum well lasers; semiconductor quantum wells; GaAsSb-GaAs; QW lasers; defects; growth temperature; quantum wells; thermally activated carrier leakage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location :
Denver, CO
ISSN :
-
Print_ISBN :
978-1-4244-5368-9
Electronic_ISBN :
-
Type :
conf
DOI :
10.1109/PHOTONICS.2010.5698756
Filename :
5698756
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2300936
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