• DocumentCode
    2300979
  • Title

    Physical properties of Ga(NAsP)/GaP QW lasers grown by MOVPE

  • Author

    Hossain, Nadir ; Jin, Shirong R. ; Sweeney, Stephen J. ; Liebich, Sven ; Reinhard, Stefan ; Volz, Kerstin ; Kunert, Bernardette ; Stolz, Wolfgang

  • Author_Institution
    Adv. Technol. Inst., Univ. of Surrey, Guildford, UK
  • fYear
    2010
  • fDate
    7-11 Nov. 2010
  • Firstpage
    65
  • Lastpage
    66
  • Abstract
    We are reporting for the first time, lasing operation at room temperature (RT) with a low threshold current density (Jth) in novel direct band-gap Ga(NAsP)/GaP QW lasers. A carrier leakage process is found to dominate the temperature dependence of the laser threshold current.
  • Keywords
    III-V semiconductors; MOCVD; arsenic compounds; gallium compounds; leakage currents; nitrogen compounds; quantum well lasers; semiconductor lasers; semiconductor quantum wells; vapour phase epitaxial growth; Ga(NAsP)-GaP; MOVPE; carrier leakage; direct bandgap QW lasers; laser threshold current; lasing operation; quantum well lasers; threshold current density;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IEEE Photonics Society, 2010 23rd Annual Meeting of the
  • Conference_Location
    Denver, CO
  • ISSN
    -
  • Print_ISBN
    978-1-4244-5368-9
  • Electronic_ISBN
    -
  • Type

    conf

  • DOI
    10.1109/PHOTONICS.2010.5698759
  • Filename
    5698759
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2300979