• DocumentCode
    2301106
  • Title

    Nanolasers grown on polycrystalline silicon

  • Author

    Ng, Kar Wei ; Ko, Wai Son ; Chen, Roger ; Tran, Thai-Truong D. ; Lu, Fanglu ; Chuang, Linus C. ; Sedgwick, Forrest G. ; Chang-Hasnain, Connie

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA
  • fYear
    2010
  • fDate
    7-11 Nov. 2010
  • Firstpage
    78
  • Lastpage
    79
  • Abstract
    MOCVD growth of single crystalline GaAs-based nanoneedle/nanopillar lasers on polycrystalline silicon is demonstrated. Superior material quality, high density and light trapping capability make these structures on polysilicon-based substrates attractive for low-cost and high-efficiency photovoltaic applications.
  • Keywords
    III-V semiconductors; MOCVD; gallium arsenide; nanophotonics; semiconductor growth; semiconductor lasers; silicon; GaAs; MOCVD growth; Si; high density; light trapping; nanolasers; nanoneedle lasers; nanopillar lasers; photovoltaic applications; silicon; superior material quality;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IEEE Photonics Society, 2010 23rd Annual Meeting of the
  • Conference_Location
    Denver, CO
  • ISSN
    -
  • Print_ISBN
    978-1-4244-5368-9
  • Electronic_ISBN
    -
  • Type

    conf

  • DOI
    10.1109/PHOTONICS.2010.5698766
  • Filename
    5698766
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2301106