Title :
Optical and structural properties of INP nanowires grown on silicon substrate
Author :
Chauvin, Nicolas ; Naji, K. ; Alouane, M. H Hadj ; Khmissi, H. ; Dumont, H. ; Maaref, H. ; Patriarche, G. ; Bru-Chevallier, C. ; Gendry, M.
Author_Institution :
Inst. des Nanotechnol. de Lyon INL, Univ. de Lyon, Lyon, France
Abstract :
Optical and structural properties of InP nanowires grown on silicon by molecular beam epitaxy using Vapor-Liquid-Solid method with different V/III pressure ratios are presented. A high V/III ratio favors nanowires with a nearly perfect wurtzite crystal phase and a 1 ns lifetime at 14K.
Keywords :
III-V semiconductors; crystal structure; indium compounds; molecular beam epitaxial growth; nanofabrication; nanowires; photoluminescence; semiconductor growth; semiconductor quantum wires; InP; Si; V-lll pressure ratios; molecular beam epitaxy; nanowires; optical properties; photoluminescence spectra; silicon substrate; structural properties; temperature 14 K; time 1 ns; vapor-liquid-solid method; wurtzite crystal phase;
Conference_Titel :
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-5368-9
DOI :
10.1109/PHOTONICS.2010.5698767
