DocumentCode :
2301179
Title :
Reduced scattering rate in nanopore structures
Author :
Dias, N.L. ; Garg, A. ; Young, J.D. ; Reddy, U. ; Verma, V.B. ; Bassett, K. ; Li, X. ; Coleman, J.J.
Author_Institution :
Univ. of Illinois, Urbana, IL, USA
fYear :
2010
fDate :
7-11 Nov. 2010
Firstpage :
84
Lastpage :
85
Abstract :
Enhanced photoluminescence emission from higher subbands of nanopore lattices compared to a quantum well is presented. Increasing pore diameter enhances the excited state emission implying reduced intersubband scattering rate, consistent with theoretical calculations.
Keywords :
III-V semiconductors; aluminium compounds; excited states; gallium arsenide; indium compounds; nanoporous materials; photoluminescence; semiconductor quantum wells; GaAs-Al0.75Ga0.25As-In0.31Ga0.69As-GaAs; enhanced photoluminescence emission; excited state emission; nanopore lattices; nanopore structures; pore diameter; quantum well; reduced scattering rate;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location :
Denver, CO
ISSN :
-
Print_ISBN :
978-1-4244-5368-9
Electronic_ISBN :
-
Type :
conf
DOI :
10.1109/PHOTONICS.2010.5698769
Filename :
5698769
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2301179
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