Title :
High light extraction efficiency of InGaN-based light-emitting diodes using the systematic design of sub-wavelength photonic crystals
Author :
Su, V.C. ; You, Y.H. ; Lee, M.L. ; Chen, Y.J. ; Kuan, C.H. ; Chen, P.H. ; Hsieh, C.J. ; Lin, R.M. ; Yu, S.F.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
This paper reports the high light extraction efficiency will be obtained by considering the systematic design of two-dimensional sub-wavelength photonic crystals, which is created on the p-side of InGaN-based light emitting diodes.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; optical design techniques; photonic crystals; wide band gap semiconductors; InGaN; high light extration efficiency; light-emitting diodes; p-side; systematic design; two-dimensional subwavelength photonic crystals; Gallium nitride; Light emitting diodes; Nanoscale devices; Photonic crystals; Surface morphology; Systematics; Temperature measurement; InGaN; light emitting diode; light extraction efficiency; photonic crystal;
Conference_Titel :
Photonics Conference (IPC), 2012 IEEE
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4577-0731-5
DOI :
10.1109/IPCon.2012.6358632
