• DocumentCode
    2301534
  • Title

    Properties of the HgCdTe linear-mode e-APD

  • Author

    Beck, J. ; Kinch, M. ; Scritchfield, R. ; Woodall, M. ; Ohlson, M. ; Wood, L. ; Mitra, P. ; Robinson, J.

  • fYear
    2010
  • fDate
    7-11 Nov. 2010
  • Firstpage
    122
  • Lastpage
    123
  • Abstract
    The band structure of Hg1-xCdxTe results in an electron avalanche photodiode (e-APD) that exhibits single carrier, deterministic, noiseless gain. Data and analysis on 5μm cutoff, Hg0.7Cd0.3Te e-APD gated-imaging arrays with sub-photon sensitivity will be presented.
  • Keywords
    II-VI semiconductors; avalanche photodiodes; band structure; cadmium compounds; focal planes; mercury compounds; wide band gap semiconductors; Hg0.7Cd0.3Te; band structure; electron avalanche photodiode; linear-mode e-APD gated-imaging arrays; noiseless gain; subphoton sensitivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IEEE Photonics Society, 2010 23rd Annual Meeting of the
  • Conference_Location
    Denver, CO
  • ISSN
    -
  • Print_ISBN
    978-1-4244-5368-9
  • Electronic_ISBN
    -
  • Type

    conf

  • DOI
    10.1109/PHOTONICS.2010.5698788
  • Filename
    5698788
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2301534