DocumentCode :
2301549
Title :
Planar InAlAs based separated absorption, transport, charge, and multiplication avalanche photodiode with large area and bandwidth-enhancement effect under high-sensitivity operation
Author :
Shi, Jin-Wei ; Wu, Z.-Y. ; Kuo, F.-M.
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Taoyuan, Taiwan
fYear :
2010
fDate :
7-11 Nov. 2010
Firstpage :
124
Lastpage :
125
Abstract :
We demonstrate 10Gbit/sec planar InAlAs based separated-absorption-transport-charge-multiplication avalanche photodiodes with a large active diameter (~50μm). By inserting InP transport layers, bandwidth-enhancement under 0.9Vbr has been observed, which releases internal-transient-limited bandwidth and realizes high-sensitivity 10Gbit/sec transmission.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; indium compounds; light absorption; light transmission; InAlAs-InP; bandwidth-enhancement effect; bit rate 10 Gbit/s; high-sensitivity transmission; internal-transient-limited bandwidth; planar based separated-absorption-transport-charge-multiplication avalanche photodiodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location :
Denver, CO
ISSN :
-
Print_ISBN :
978-1-4244-5368-9
Electronic_ISBN :
-
Type :
conf
DOI :
10.1109/PHOTONICS.2010.5698789
Filename :
5698789
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2301549
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