DocumentCode
2301598
Title
Impact ionization under dynamic fields
Author
Hayat, Majeed M. ; Ramirez, David A.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of New Mexico, Albuquerque, NM, USA
fYear
2010
fDate
7-11 Nov. 2010
Firstpage
128
Lastpage
129
Abstract
In this paper we outline the potential benefits of modulating the applied electric field on the performance of avalanche photodiodes (APDs). Our approach enables the calculation of the impulse response, gain and and excess noise factor, breakdown probability, as well as pulse duration time all under conditions of a dynamic field in the multiplication region.
Keywords
avalanche photodiodes; electric breakdown; impact ionisation; impulse noise; transient response; avalanche photodiode; breakdown probability; dynamic fields; excess noise factor; impact ionization; impulse gain; impulse response; pulse duration time;
fLanguage
English
Publisher
ieee
Conference_Titel
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location
Denver, CO
ISSN
-
Print_ISBN
978-1-4244-5368-9
Electronic_ISBN
-
Type
conf
DOI
10.1109/PHOTONICS.2010.5698791
Filename
5698791
Link To Document