Title :
Characterization of InGaAs/InP single-photon avalanche diodes
Author :
Tosi, Alberto ; Acerbi, Fabio ; Mora, Alberto Dalla ; Zappa, Franco
Author_Institution :
Dipt. di Elettron. e Inf., Politec. di Milano, Vinci, Italy
Abstract :
Improvements on InGaAs/InP Single Photon Avalanche Diodes (SPADs) make them very promising for many NIR single-photon counting applications. In order to fully exploit such detectors, it is mandatory to operate them in optimized working conditions and in association with proper front-end electronics. New InGaAs/InP SPADs provide low dark-count rate at moderately low temperatures. They also show good photon detection efficiency and quite low time jitter in the near-infrared range. We report and compare the performance of two generations of InGaAs/InP SPADs working at 1550 nm.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; timing jitter; InGaAs-InP; NIR single-photon counting; SPAD; dark count rate; front end electronics; jitter; photon detection efficiency; single-photon avalanche diodes; wavelength 1550 nm;
Conference_Titel :
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-5368-9
DOI :
10.1109/PHOTONICS.2010.5698792
