DocumentCode
2301612
Title
Characterization of InGaAs/InP single-photon avalanche diodes
Author
Tosi, Alberto ; Acerbi, Fabio ; Mora, Alberto Dalla ; Zappa, Franco
Author_Institution
Dipt. di Elettron. e Inf., Politec. di Milano, Vinci, Italy
fYear
2010
fDate
7-11 Nov. 2010
Firstpage
130
Lastpage
131
Abstract
Improvements on InGaAs/InP Single Photon Avalanche Diodes (SPADs) make them very promising for many NIR single-photon counting applications. In order to fully exploit such detectors, it is mandatory to operate them in optimized working conditions and in association with proper front-end electronics. New InGaAs/InP SPADs provide low dark-count rate at moderately low temperatures. They also show good photon detection efficiency and quite low time jitter in the near-infrared range. We report and compare the performance of two generations of InGaAs/InP SPADs working at 1550 nm.
Keywords
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; timing jitter; InGaAs-InP; NIR single-photon counting; SPAD; dark count rate; front end electronics; jitter; photon detection efficiency; single-photon avalanche diodes; wavelength 1550 nm;
fLanguage
English
Publisher
ieee
Conference_Titel
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location
Denver, CO
ISSN
-
Print_ISBN
978-1-4244-5368-9
Electronic_ISBN
-
Type
conf
DOI
10.1109/PHOTONICS.2010.5698792
Filename
5698792
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